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Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Li, Zhiqiang; An, Xia; Li, Min; Yun, Quanxin; Lin, Meng; Li, Ming; Zhang, Xing; Huang, Ru

期刊名称IEEE Electron Device Letters
作者Li, Zhiqiang; An, Xia; Li, Min; Yun, Quanxin; Lin, Meng; Li, Ming; Zhang, Xing; Huang, Ru
卷第33卷
期第12期
印刷ISSN0741-3106
电子ISSN1558-0563
文件大小442.18KB
发表时间2012-12
DOI10.1109/led.2012.2220954
页码1687-1689