[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- 作者Wu, Ernest; Sune, Jordi; LaRow, Charles; Dufresne, Roger
- 文件大小548.50KB
- 发表时间2012
- DOI10.1109/iedm.2012.6479123
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