[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations

Zou, Jibin; Wang, Runsheng; Gong, Nanbo; Huang, Ru; Xu, Xiaoqing; Ou, Jiaojiao; Liu, Changze; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Yu, Shaofeng; Ren, Pengpeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan

作者Zou, Jibin; Wang, Runsheng; Gong, Nanbo; Huang, Ru; Xu, Xiaoqing; Ou, Jiaojiao; Liu, Changze; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Yu, Shaofeng; Ren, Pengpeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan
文件大小1233.73KB
发表时间2012
DOI10.1109/vlsit.2012.6242500
页码139-140

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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations