[IEEE 2012 International Conference on Emerging Electronics (ICEE 2012) - Mumbai, India (2012.12.15-2012.12.17)] 2012 International Conference on Emerging Electronics - Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET
- 作者Sharma, Dheeraj; Vishvakarma, Santosh Kumar
- 文件大小649.99KB
- 发表时间2012
- DOI10.1109/icemelec.2012.6636261
- 页码1-4
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