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Auger losses in dilute InAsBiHader, J.; Badescu, S. C.; Bannow, L. C.; Moloney, J. V.; Johnson, S. R.; Koch, S. W. · Applied Physics Letters · 2018
Extended band anti-crossing model for dilute bismidesHader, J.; Badescu, S. C.; Bannow, L. C.; Moloney, J. V.; Johnson, S. R.; Koch, S. W. · Applied Physics Letters · 2018
Ultrafast nonequilibrium carrier dynamics in semiconductor laser mode lockingKilen, I.; Hader, J.; Moloney, J. V.; Koch, S. W. · Optica · 2014
Nonequilibrium gain in optically pumped GaInNAs laser structuresThränhardt, A.; Becker, S.; Schlichenmaier, C.; Kuznetsova, I.; Meier, T.; Koch, S. W.; Hader, J.; Moloney, J. V.; Chow, W. W. · Applied Physics Letters · 2004
Optical excitation dependent emission properties of InGaN quantum wellsHader, J.; Moloney, J. V.; Koch, S. W. · Journal of Computational Electronics · 2015
Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus grapheneHader, J.; Yang, H.-J.; Scheller, M.; Moloney, J. V.; Koch, S. W. · Journal of Applied Physics · 2016
Band offset in (Ga, In)As/Ga(As, Sb) heterostructuresGies, S.; Weseloh, M. J.; Fuchs, C.; Stolz, W.; Hader, J.; Moloney, J. V.; Koch, S. W.; Heimbrodt, W. · Journal of Applied Physics · 2016
Supression of carrier recombination in semiconductor lasers by phase-space fillingHader, J.; Moloney, J. V.; Koch, S. W. · 2005