Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors

• 期刊名称Journal of Applied Physics
• 作者Dieme, Robert; Zhang, Jack; Rudawski, Nicholas G.; Jones, Kevin; Bosman, Gijs; Sheplak, Mark; Nishida, Toshikazu
• 卷第112卷
• 期第3期
• 印刷ISSN0021-8979
• 文件大小1172.75KB
• 发表时间2012
• DOI10.1063/1.4740221