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[IEEE 2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON 2012) - Phetchaburi, Thailand (2012.05.16-2012.05.18)] 2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology - Evaluation of Schottky barrier parameters of Al Schottky contacts on platinum doped n-silicon

[IEEE 2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON 2012) - Phetchaburi, Thailand (2012.05.16-2012.05.18)] 2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology - Evaluation of Schottky barrier parameters of Al Schottky contacts on platinum doped n-silicon

Prabket, Jirawat; Itthikusaman, Wiwat; Poyai, Amporn
  • 作者Prabket, Jirawat; Itthikusaman, Wiwat; Poyai, Amporn
  • 文件大小302.60KB
  • 发表时间2012
  • DOI10.1109/ecticon.2012.6254227
  • 页码1-4
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