$Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator$

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator

Thanh, Pham Van; Trinh, Bui Nguyen Quoc; Miyasako, Takaaki; Tue, Phan Trong; Tokumitsu, Eisuke; Shimoda, Tatsuya

期刊名称Japanese Journal of Applied Physics
作者Thanh, Pham Van; Trinh, Bui Nguyen Quoc; Miyasako, Takaaki; Tue, Phan Trong; Tokumitsu, Eisuke; Shimoda, Tatsuya
卷第51卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小1068.85KB
发表时间2012-9-20
DOI10.1143/JJAP.51.09LA09

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Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator