Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes

• 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• 作者Murray, L. M.; Norton, D. T.; Olesberg, J. T.; Boggess, T. F.; Prineas, J. P.
• 卷第30卷
• 期第2期
• 印刷ISSN1071-1023
• 文件大小1908.09KB
• 发表时间2012
• DOI10.1116/1.3692252