![Enhanced internal gettering in n/n+epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate]()
Enhanced internal gettering in n/n+epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrateDong, Peng; Liang, Xingbo; Tian, Daxi; Zhao, Jianjiang; Gao, Chao; Ma, Xiangyang; Yang, Deren · Journal of Materials Science: Materials in Electronics · 2014