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Modification of Schottky barrier height on Si (111) by Ga-termination

Modification of Schottky barrier height on Si (111) by Ga-termination

Long, Wei; Li, Yang; Tung, Raymond T.

期刊名称Surface Science
作者Long, Wei; Li, Yang; Tung, Raymond T.
卷第610卷
印刷ISSN0039-6028
文件大小423.01KB
发表时间2013-4
DOI10.1016/j.susc.2013.01.006
页码48-52

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