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Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

Pan, Tung-Ming; Lu, Chih-Hung
  • 期刊名称Materials Chemistry and Physics
  • 作者Pan, Tung-Ming; Lu, Chih-Hung
  • 卷第139卷
  • 印刷ISSN0254-0584
  • 文件大小650.91KB
  • 发表时间2013-5
  • DOI10.1016/j.matchemphys.2013.01.015
  • 页码437-442
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