Precise Analytical Model for Short-Channel Quadruple-Gate Gate-All-Around MOSFET
- 期刊名称IEEE Transactions on Nanotechnology
- 作者Sharma, Dheeraj; Vishvakarma, Santosh Kumar
- 卷第12卷
- 期第3期
- 印刷ISSN1536-125X
- 电子ISSN1941-0085
- 文件大小1365.43KB
- 发表时间2013-05
- DOI10.1109/TNANO.2013.2251895
- 页码378-385
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