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The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

Zhao, Hongbin; Tu, Hailing; Wei, Feng; Zhang, Xinqiang; Xiong, Yuhua; Du, Jun

期刊名称Solid-State Electronics
作者Zhao, Hongbin; Tu, Hailing; Wei, Feng; Zhang, Xinqiang; Xiong, Yuhua; Du, Jun
卷第89卷
印刷ISSN0038-1101
文件大小1480.58KB
发表时间2013-11
DOI10.1016/j.sse.2013.06.011
页码12-16

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