Voltage difference engineering in SOI MOSFETs: A novel side gate device with improved electrical performance
- 期刊名称Materials Science in Semiconductor Processing
- 作者Anvarifard, Mohammad K.; Orouji, Ali A.
- 卷第16卷
- 期第6期
- 印刷ISSN1369-8001
- 文件大小1169.29KB
- 发表时间2013-12
- DOI10.1016/j.mssp.2013.05.006
- 页码1672-1678
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