Drain leakage and hot carrier reliability characteristics of asymmetric source-drain MOSFET
- 期刊名称Journal of the Korean Physical Society
- 作者Kim, Kwangsoo; Choi, Byoungseon; Baek, Dohyun; Kim, Hyungwook; Choi, Byoundeog
- 卷第63卷
- 期第5期
- 印刷ISSN0374-4884
- 电子ISSN1976-8524
- 文件大小314.86KB
- 发表时间2013-09
- DOI10.3938/jkps.63.1023
- 页码1023-1027