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Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Kim, Yu-Mi; Jeong, Kwang-Seok; Yun, Ho-Jin; Yang, Seung-Dong; Lee, Sang-Youl; Kim, Yeong-Cheol; Jeong, Jae-Kyeong; Lee, Hi-Deok; Lee, Ga-Won
  • 期刊名称Applied Physics Letters
  • 作者Kim, Yu-Mi; Jeong, Kwang-Seok; Yun, Ho-Jin; Yang, Seung-Dong; Lee, Sang-Youl; Kim, Yeong-Cheol; Jeong, Jae-Kyeong; Lee, Hi-Deok; Lee, Ga-Won
  • 卷第102卷
  • 期第17期
  • 印刷ISSN0003-6951
  • 文件大小1650.88KB
  • 发表时间2013
  • DOI10.1063/1.4803536
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