Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
- 期刊名称Microelectronic Engineering
- 作者Na, Heedo; Oh, Jinho; Lee, Kyumin; Kim, Jonggi; Lee, Sunghoon; Lim, Dong Hyeok; Cho, Mann-Ho; Sohn, Hyunchul
- 卷第110卷
- 印刷ISSN0167-9317
- 文件大小2063.26KB
- 发表时间2013-10
- DOI10.1016/j.mee.2013.04.025
- 页码6-11
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