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RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Kim, Jonggi; Lee, Sunghoon; Lee, Kyumin; Na, Heedo; Mok, In-Su; Kim, Youngjae; Ko, Dae-Hong; Sohn, Hyunchul
  • 期刊名称Microelectronic Engineering
  • 作者Kim, Jonggi; Lee, Sunghoon; Lee, Kyumin; Na, Heedo; Mok, In-Su; Kim, Youngjae; Ko, Dae-Hong; Sohn, Hyunchul
  • 卷第112卷
  • 印刷ISSN0167-9317
  • 文件大小1448.08KB
  • 发表时间2013-12
  • DOI10.1016/j.mee.2013.05.014
  • 页码46-51
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