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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge ${rm n}^{+}/{rm p}$ Diode Achieved by Multiple Implantation and Multiple Annealing Technique

Li, Zhiqiang; An, Xia; Yun, Quanxin; Lin, Meng; Li, Min; Li, Ming; Zhang, Xing; Huang, Ru

期刊名称IEEE Electron Device Letters
作者Li, Zhiqiang; An, Xia; Yun, Quanxin; Lin, Meng; Li, Min; Li, Ming; Zhang, Xing; Huang, Ru
卷第34卷
期第9期
印刷ISSN0741-3106
电子ISSN1558-0563
文件大小296.21KB
发表时间2013-09
DOI10.1109/LED.2013.2272641
页码1097-1099

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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge ${rm n}^{+}/{rm p}$ Diode Achieved by Multiple Implantation and Multiple Annealing Technique