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[IEEE 2013 2nd International Symposium on Next-Generation Electronics (ISNE 2013) - Kaohsiung (2013.2.25-2013.2.26)] 2013 International Symposium on Next-Generation Electronics - Enhancing the responsivity of UV to visible by inserting a SiO<inf>2</inf> layer between p-Si and i-ZnO for the heterojunction photodiode with p-Si/SiO2/i-ZnO/n-ZnO structure

[IEEE 2013 2nd International Symposium on Next-Generation Electronics (ISNE 2013) - Kaohsiung (2013.2.25-2013.2.26)] 2013 International Symposium on Next-Generation Electronics - Enhancing the responsivity of UV to visible by inserting a SiO2 layer between p-Si and i-ZnO for the heterojunction photodiode with p-Si/SiO2/i-ZnO/n-ZnO structure

Wu, W-T H.; Jun-Dar Hwang,
  • 作者Wu, W-T H.; Jun-Dar Hwang,
  • 文件大小362.24KB
  • 发表时间2013
  • DOI10.1109/isne.2013.6512384
  • 页码443-445
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