[IEEE 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO) - Beijing, China (2013.08.5-2013.08.8)] 2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013) - Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n- and p-type Bulk FinFETs
Chen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming
- 作者Chen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming
- 文件大小1281.44KB
- 发表时间2013
- DOI10.1109/nano.2013.6720994
- 页码442-445