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[IEEE 2013 IEEE 10th International Conference on ASIC (ASICON 2013) - Shenzhen, China (2013.10.28-2013.10.31)] 2013 IEEE 10th International Conference on ASIC - A new high performance RF LDMOS with vertical n+n-p-p+ drain structure

[IEEE 2013 IEEE 10th International Conference on ASIC (ASICON 2013) - Shenzhen, China (2013.10.28-2013.10.31)] 2013 IEEE 10th International Conference on ASIC - A new high performance RF LDMOS with vertical n+n-p-p+ drain structure

Xiaofei Chen, ; Yading Shen, ; XuechengZou, ; Shuangxi Lin, ; Wanghui Zou,

作者Xiaofei Chen, ; Yading Shen, ; XuechengZou, ; Shuangxi Lin, ; Wanghui Zou,
文件大小548.96KB
发表时间2013
DOI10.1109/asicon.2013.6811949
页码1-4

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