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[IEEE 2013 International Conference on Communications, Circuits and Systems (ICCCAS) - Chengdu, China (2013.11.15-2013.11.17)] 2013 International Conference on Communications, Circuits and Systems (ICCCAS) - Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

[IEEE 2013 International Conference on Communications, Circuits and Systems (ICCCAS) - Chengdu, China (2013.11.15-2013.11.17)] 2013 International Conference on Communications, Circuits and Systems (ICCCAS) - Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Tang, Cen; Sheng, Kuang; Xie, Gang

作者Tang, Cen; Sheng, Kuang; Xie, Gang
文件大小503.65KB
发表时间2013
DOI10.1109/icccas.2013.6765355
页码353-357

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