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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Monolithically integrated 600-V E/D-mode SiN<inf>x</inf>/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin J.
  • 作者Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin J.
  • 文件大小377.73KB
  • 发表时间2013
  • DOI10.1109/iedm.2013.6724574
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