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[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Micro-texture dependence of stress-induced migration of electroplated copper thin film interconnections used for 3D integration

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Micro-texture dependence of stress-induced migration of electroplated copper thin film interconnections used for 3D integration

Suzuki, Ken; Miura, Hideo; Asai, Osamu; Furuya, Ryosuke; Sung, Jaeuk; Murata, Naokazu
  • 作者Suzuki, Ken; Miura, Hideo; Asai, Osamu; Furuya, Ryosuke; Sung, Jaeuk; Murata, Naokazu
  • 文件大小3713.88KB
  • 发表时间2013
  • DOI10.1109/sispad.2013.6650625
  • 页码264-267
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