[IEEE 2013 Symposium on Microelectronics Technology and Devices (SBMicro) - Curitiba, Brazil (2013.09.2-2013.09.6)] 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013) - Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction
- 作者Teixeira, Fernando F.; Bordallo, Caio C. M.; Silveira, Marcilei A. G.; Agopian, Paula G. D.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor
- 文件大小1159.94KB
- 发表时间2013
- DOI10.1109/sbmicro.2013.6676144
- 页码1-4
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