Increased Subthreshold Current due to Source–Drain Direct Tunneling in Ultrashort-Channel III–V Metal–Oxide–Semiconductor Field-Effect Transistors

Koba, Shunsuke; Maegawa, Yōsuke; Ohmori, Masaki; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Ogawa, Matsuto

期刊名称Applied Physics Express
作者Koba, Shunsuke; Maegawa, Yōsuke; Ohmori, Masaki; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Ogawa, Matsuto
卷第6卷
期第6期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小1977.34KB
发表时间2013-06-01
DOI10.7567/APEX.6.064301

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