Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
- 期刊名称Journal of Semiconductors
- 作者Chen, Wanjun; Zhang, Jing; Zhang, Bo; Chen, Kevin Jing
- 卷第34卷
- 期第2期
- 印刷ISSN1674-4926
- 文件大小1554.39KB
- 发表时间2013-02
- DOI10.1088/1674-4926/34/2/024003
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