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Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts

Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts

Kato, Masashi; Kimura, Masaya; Ichimura, Masaya

期刊名称Japanese Journal of Applied Physics
作者Kato, Masashi; Kimura, Masaya; Ichimura, Masaya
卷第52卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小414.40KB
发表时间2013-04-01
DOI10.7567/JJAP.52.04CP02

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