Erratum: “Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species”

Suwa, Tomoyuki; Teramoto, Akinobu; Kumagai, Yuki; Abe, Kenichi; Li, Xiang; Nakao, Yukihisa; Yamamoto, Masashi; Nohira, Hiroshi; Muro, Takayuki; Kinoshita, Toyohiko; Sugawa, Shigetoshi; Ohmi, Tadahiro; Hattori, Takeo

期刊名称Japanese Journal of Applied Physics
作者Suwa, Tomoyuki; Teramoto, Akinobu; Kumagai, Yuki; Abe, Kenichi; Li, Xiang; Nakao, Yukihisa; Yamamoto, Masashi; Nohira, Hiroshi; Muro, Takayuki; Kinoshita, Toyohiko; Sugawa, Shigetoshi; Ohmi, Tadahiro; Hattori, Takeo
卷第52卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小743.89KB
发表时间2013-06-01
DOI10.7567/JJAP.52.069203

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Erratum: “Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species”