Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
Suwa, Tomoyuki; Teramoto, Akinobu; Kumagai, Yuki; Abe, Kenichi; Li, Xiang; Nakao, Yukihisa; Yamamoto, Masashi; Nohira, Hiroshi; Muro, Takayuki; Kinoshita, Toyohiko; Sugawa, Shigetoshi; Ohmi, Tadahiro; Hattori, Takeo
- 期刊名称Japanese Journal of Applied Physics
- 作者Suwa, Tomoyuki; Teramoto, Akinobu; Kumagai, Yuki; Abe, Kenichi; Li, Xiang; Nakao, Yukihisa; Yamamoto, Masashi; Nohira, Hiroshi; Muro, Takayuki; Kinoshita, Toyohiko; Sugawa, Shigetoshi; Ohmi, Tadahiro; Hattori, Takeo
- 卷第52卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小478.13KB
- 发表时间2013-03-01
- DOI10.7567/JJAP.52.031302