Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y
<sub/>2</sub>
O
<sub/>3</sub>
and Atomic Layer Deposition of Al
<sub/>2</sub>
O
<sub/>3</sub>
: A Comparative Study

Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y ₂ O ₃ and Atomic Layer Deposition of Al ₂ O ₃ : A Comparative Study

Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J.; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; Kwo, J. Raynien; Hong, Minghwei

期刊名称Applied Physics Express
作者Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J.; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; Kwo, J. Raynien; Hong, Minghwei
卷第6卷
期第12期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小1294.78KB
发表时间2013-12-01
DOI10.7567/APEX.6.121201

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Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y 2 O 3 and Atomic Layer Deposition of Al 2 O 3 : A Comparative Study

Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y ₂ O ₃ and Atomic Layer Deposition of Al ₂ O ₃ : A Comparative Study