Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults
- 期刊名称Japanese Journal of Applied Physics
- 作者Tanaka, Atsushi; Nakayama, Koji; Asano, Katsunori; Miyazawa, Tetsuya; Tsuchida, Hidekazu
- 卷第52卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小300.56KB
- 发表时间2013-04-01
- DOI10.7567/jjap.52.04cp10
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