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An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

Manosukritkul, Phasapon; Kerdpardist, Amonrat; Saenlamool, Montree; Chaowicharat, Ekalak; Poyai, Amporn; Titiroongruang, Wisut
  • 期刊名称Advanced Materials Research
  • 作者Manosukritkul, Phasapon; Kerdpardist, Amonrat; Saenlamool, Montree; Chaowicharat, Ekalak; Poyai, Amporn; Titiroongruang, Wisut
  • 卷第717卷
  • 电子ISSN1662-8985
  • 文件大小1064.73KB
  • 发表时间2013-7
  • DOI10.4028/www.scientific.net/amr.717.158
  • 页码158-163
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