Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

Lin, Yue; Zhang, Yong; Liu, Zhiqiang; Su, Liqin; Zhang, Jihong; Wei, Tongbo; Chen, Zhong

期刊名称Journal of Applied Physics
作者Lin, Yue; Zhang, Yong; Liu, Zhiqiang; Su, Liqin; Zhang, Jihong; Wei, Tongbo; Chen, Zhong
卷第115卷
期第2期
印刷ISSN0021-8979
电子ISSN1089-7550
文件大小3136.39KB
发表时间2014-01-14
DOI10.1063/1.4861150

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