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Built-In Binary Code Inversion Technique for On-Chip Flash Memory Sense Amplifier With Reduced Read Current Consumption

Built-In Binary Code Inversion Technique for On-Chip Flash Memory Sense Amplifier With Reduced Read Current Consumption

Daejin Park, ; Tag Gon Kim,
  • 期刊名称IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • 作者Daejin Park, ; Tag Gon Kim,
  • 卷第22卷
  • 期第5期
  • 印刷ISSN1063-8210
  • 电子ISSN1557-9999
  • 文件大小1601.53KB
  • 发表时间2014-5
  • DOI10.1109/TVLSI.2013.2265894
  • 页码1187-1191
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