Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3 substrate
- 期刊名称Microscopy
- 作者Park, J. S.; Yang, J.-M.; Park, K. J.; Park, Y. C.; Yoo, J. H.; Jeong, C. S.; Park, J.; He, Y.; Shin, K.
- 卷第63卷
- 期第1期
- 印刷ISSN2050-5698
- 电子ISSN2050-5701
- 文件大小1528.08KB
- 发表时间2014-02-01
- DOI10.1093/jmicro/dft040
- 页码15-22