Shift of the photoemission threshold in III–V and II–VI semiconductors
- 期刊名称JETP Letters
- 作者Karpushin, A. A.; Sorokin, A. N.
- 卷第99卷
- 期第6期
- 印刷ISSN0021-3640
- 电子ISSN1090-6487
- 文件大小252.67KB
- 发表时间2014-05
- DOI10.1134/S0021364014060071
- 页码329-332
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