A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures
- 期刊名称IEEE Transactions on Electron Devices
- 作者Ghobadi, Nayereh; Pourfath, Mahdi
- 卷第61卷
- 期第1期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1223.54KB
- 发表时间2014-01
- DOI10.1109/ted.2013.2291788
- 页码186-192
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