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High speed Bias Temperature Instability measurements on 20nm RMG HKMG MOSFETs

High speed Bias Temperature Instability measurements on 20nm RMG HKMG MOSFETs

Chandra, Nishant; Chandrashekhar, Sandhya; Francis, Rick; Kerber, Andreas; Srinivasan, Purushothaman; Nigam, Tanya
  • 期刊名称Solid-State Electronics
  • 作者Chandra, Nishant; Chandrashekhar, Sandhya; Francis, Rick; Kerber, Andreas; Srinivasan, Purushothaman; Nigam, Tanya
  • 卷第101卷
  • 印刷ISSN0038-1101
  • 文件大小1107.28KB
  • 发表时间2014-11
  • DOI10.1016/j.sse.2014.06.032
  • 页码18-22
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