On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors
- 期刊名称Journal of Applied Physics
- 作者Ghobadi, Nayereh; Pourfath, Mahdi
- 卷第116卷
- 期第18期
- 印刷ISSN0021-8979
- 电子ISSN1089-7550
- 文件大小1568.50KB
- 发表时间2014-11-14
- DOI10.1063/1.4901584
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