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[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High channel mobility double gate trench MOSFET

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High channel mobility double gate trench MOSFET

Katoh, Shunsuke; Kawaguchi, Yusuke; Takano, Akio

作者Katoh, Shunsuke; Kawaguchi, Yusuke; Takano, Akio
文件大小861.93KB
发表时间2014
DOI10.1109/ispsd.2014.6856002
页码167-170

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