Comparative study of leakage power in CNTFET over MOSFET device
Sinha, Sanjeet Kumar; Chaudhury, Saurabh
- 期刊名称Journal of Semiconductors
- 作者Sinha, Sanjeet Kumar; Chaudhury, Saurabh
- 卷第35卷
- 期第11期
- 印刷ISSN1674-4926
- 文件大小1024.15KB
- 发表时间2014-11
- DOI10.1088/1674-4926/35/11/114002