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The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

Ogata, Ryosuke; Yoshihara, Masataka; Murayama, Naohiro; Kishida, Satoru; Kinoshita, Kentaro
  • 期刊名称MRS Proceedings
  • 作者Ogata, Ryosuke; Yoshihara, Masataka; Murayama, Naohiro; Kishida, Satoru; Kinoshita, Kentaro
  • 卷第1691卷
  • 电子ISSN1946-4274
  • 文件大小667.72KB
  • 发表时间2014
  • DOI10.1557/opl.2014.792
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