The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)
Ogata, Ryosuke; Yoshihara, Masataka; Murayama, Naohiro; Kishida, Satoru; Kinoshita, Kentaro
- 期刊名称MRS Proceedings
- 作者Ogata, Ryosuke; Yoshihara, Masataka; Murayama, Naohiro; Kishida, Satoru; Kinoshita, Kentaro
- 卷第1691卷
- 电子ISSN1946-4274
- 文件大小667.72KB
- 发表时间2014
- DOI10.1557/opl.2014.792