Channel length scaling limits of III–V channel MOSFETs governed by source–drain direct tunneling
- 期刊名称Japanese Journal of Applied Physics
- 作者Koba, Shunsuke; Ohmori, Masaki; Maegawa, Yōsuke; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Ogawa, Matsuto
- 卷第53卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小813.35KB
- 发表时间2014-04-01
- DOI10.7567/JJAP.53.04EC10
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