[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Extraction of quasi-ballistic transport parameters in Si double-gate MOSFETs based on Monte Carlo method
Ishida, Ryoma; Koba, Shunsuke; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Uno, Shigeyasu; Ogawa, Matsuto
- 作者Ishida, Ryoma; Koba, Shunsuke; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Uno, Shigeyasu; Ogawa, Matsuto
- 文件大小492.77KB
- 发表时间2014
- DOI10.1109/sispad.2014.6931586
- 页码153-156