700 V ultra-low on-resistance DB-nLDMOS with optimised thermal budget and neck region
- 期刊名称Electronics Letters
- 作者Qiao, Ming; Zhang, Bo; Mao, Kun; Li, Zhaoji
- 卷第50卷
- 期第3期
- 印刷ISSN0013-5194
- 电子ISSN1350-911X
- 文件大小254.40KB
- 发表时间2014-01-30
- DOI10.1049/el.2013.2287
- 页码209-211
PrefaceChandrasekhar, V. · Proceedings of the National Academy of Sciences, India Section A: Physical Sciences · 2014
ForewordDesiraju, Gautam R. · Proceedings of the National Academy of Sciences, India Section A: Physical Sciences · 2014
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