[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests

• 作者Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Bruckner, P.; Polyakov, V.; Wespel, M.; Muller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
• 文件大小357.67KB
• 发表时间2014
• DOI10.1109/iirw.2014.7049524
• 页码115-118