[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS
Nguyen, D. D.; Kouhestani, C.; Kambour, K. E.; Bersuker, G.; Devine, R. A. B.
- 作者Nguyen, D. D.; Kouhestani, C.; Kambour, K. E.; Bersuker, G.; Devine, R. A. B.
- 文件大小224.16KB
- 发表时间2014
- DOI10.1109/iirw.2014.7049531
- 页码143-146